2 Stage Doherty 3.3 – 4.2 GHz
Discover this unique one-stage Doherty design delivering exceptional efficiency and performance
Power Amplifier Key Features
- GaN/SiC transistors, 2 stages
- Frequency range: 3.3GHz – 4.2GHz
- PAE: 35% @ 8dB OBO
- Output power: P3dB = 47.5 dBm
- Power gain: 29dB
- Board size: 60×40 mm
Typical Applications
- 3GPP 5G NR FR1 bands n48, n77, n78
- 3GPP 4G LTE bands 42, 48, 49 and 52
- FDD and TDD systems
- Microcell Base Station
- Small cells for wireless communications infrastructure
- Active antennas
- Land Mobile and Military Radio Communications
- General purpose wireless applications
- MMIC : Massive MIMO applications
RF pulsed characterization:
- 100μs, 10% Duty Cycle Final Stage Drain Efficiency
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Amplifier Performances
- Test signal: 5GNR 100MHz 1C 100MHz FDD (8dB PAPR)
- Pout = 39.5dBm
- Xilinx RFSoC ZCU670 test platform controlled by IQstar
- Sampling freq: 983.04MS/s
Use case
- Test signal: 5GNR 100MHz 2C 600MHz FDD (8dB PAPR)
- Pout = 39.5dBm
- Sampling freq: 2457.6MS/s
Time Division Duplex mode Use case
- Test signal: 5GNR 100MHz 4C 400MHz TDD (8dB PAPR)
- Pout = 39.5dBm
- Sampling freq: 1638.4MS/s
- Xilinx RFSoC ZCU670 test platform controlled by IQSTAR
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