2 Stage Doherty 3.7 – 4.2 GHz
Discover this unique one-stage Doherty design delivering exceptional efficiency and performance
Power Amplifier Key Features
- GaN/SiC transistors, 2 stages
- Frequency range: 3.7GHz – 4.2GHz
- PAE: 42% @ 8dB OBO
- Output power: P3dB = 47.5 dBm
- Power gain: 31dB
- Board size: 60×40 mm
Typical Applications
- 3GPP 5G NR FR1 bands n77 and n78
- FDD and TDD systems
- Microcell Base Station
- Small cells for wireless communications infrastructure
- Satellite Communications
- Fixed Wireless Access (FWA)
- Private Networks
- Public Safety and Critical Communications
- General purpose wireless applications
- MMIC : Massive MIMO applications
Amplifier Performances
- Test signal: 5GNR 100MHz 1C 100MHz FDD (8dB PAPR)
- Pout = 39.5dBm
- Xilinx RFSoC ZCU670 test platform controlled by IQstar
- Sampling freq: 983.04MS/s
Use case
- Test signal: 5GNR 100MHz 2C 400MHz FDD (8dB PAPR)
- Pout = 39.5dBm
- Sampling freq: 1638.4MS/s
Time Division Duplex mode Use case
- Test signal: 5GNR 100MHz 4C 400MHz TDD (8dB PAPR)
- Pout = 39.5dBm
- Sampling freq: 1638.4MS/s
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