2-Stage Doherty 3.7 – 4.2 GHz
Discover this unique 2-stage Doherty design (driver and final amplifiers in the same design) delivering exceptional efficiency figures.
The device is 50 Ω pre-matched and RoHS compliant.
Power Amplifier Key Features
- GaN on SiC transistors, 2 stages
- Frequency range: 3.7 GHz – 4.2 GHz
- PAE: 42% at 8 dB output back off
- Output power at P3dB = 47.5 dBm
- Power gain: 31 dB
- Board size: 60 x 40 mm
Typical Applications
- 3GPP 5G NR FR1 bands n77 and n78
- Frequency Division Duplex and Time Division Duplex systems
- Microcell Base Station
- Small cells for wireless communications infrastructure
- Satellite Communications
- Fixed Wireless Access (FWA)
- Private Networks
- Public Safety and Critical Communications
- General purpose wireless applications
- MIMO Applications
PA Efficiency Performance (over the entire bandwidth):
- RF pulsed characterization: 100 μs, 10% Duty Cycle
Amplifier Performances
- Test signal: 5G NR signal, 1 channel of 100 MHz, Frequency Division Duplex (8 dB PAPR)
- Tested with the AMD RFSoC ZCU670 Test Platform controlled by IQSTAR
- Sampling freq: 983.04 MS/s
FDD Use case
- Test signal: 5G NR signal, 2 channels of 100 MHz each, separated by a gap of 200 MHz. (400 MHz of instantaneous bandwidth) Frequency Division Duplex (8 dB PAPR)
- Tested with the AMD RFSoC ZCU670 Test Platform controlled by IQSTAR
- Pout = 39.5 dBm
- Sampling freq: 1638.4 MS/s
TDD Use case
- Test signal: 5G NR signal, 4 channels of 100 MHz each (400 MHz of instantaneous bandwidth), Time Division Duplex (8 dB PAPR)
- Tested with the AMD RFSoC ZCU670 Test Platform controlled by IQSTAR
- Pout = 39.5 dBm
- Sampling freq: 1638.4 MS/s
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+33 05 55 42 62 44
Head Office: 20 rue Atlantis, 87068, Limoges, France