Discover this unique 2-stage Doherty (driver and final amplifiers in the same design) delivering exceptional performances over its large instantaneous bandwidth.
The device is 50 Ω pre-matched and RoHS compliant.
Power Amplifier Key Features
GaN on SiC transistors, 2 stages
Frequency range: 3.3 GHz – 4.2 GHz
PAE: 35% at 8 dB Output Back Off (OBO)
Output power at P3dB = 47.5 dBm
Power gain: 29 dB
Board size: 60 x 40 mm
Typical Applications
3GPP 5G NR FR1 bands n48, n77, n78
3GPP 4G LTE bands 42, 48, 49 and 52
FDD and TDD systems
Microcell Base Station
Small cells for wireless communications infrastructure