2-Stage Doherty 3.3 – 4.2 GHz

Discover this unique 2-stage Doherty (driver and final amplifiers in the same design) delivering exceptional performances over its large instantaneous bandwidth.

The device is 50 Ω pre-matched and RoHS compliant.

Power Amplifier Key Features

  • GaN on SiC transistors, 2 stages
  • Frequency range: 3.3 GHz – 4.2 GHz
  • PAE: 35% at 8 dB Output Back Off (OBO)
  • Output power at P3dB = 47.5 dBm
  • Power gain: 29 dB
  • Board size: 60 x 40 mm
2stage-doherty-3.3-4.2-GHz-key-features

Typical Applications

  • 3GPP 5G NR FR1 bands n48, n77, n78
  • 3GPP 4G LTE bands 42, 48, 49 and 52
  • FDD and TDD systems
  • Microcell Base Station
  • Small cells for wireless communications infrastructure
  • Active antennas
  • Land Mobile and Military Radio Communications
  • General purpose wireless applications
  • MIMO applications
2stage doherty 3.3 - 4.2 GHz
2 stage doherty 3.3-4.2 Power Amplifier Performances RF Pulse Characterization

PA Efficiency Performance (over the entire bandwidth):

  • RF pulsed characterization: 100 μs, 10% Duty Cycle

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Amplifier Performances

  • Test signal: 5G NR signal, 1 channel of 100 MHz, Frequency Division Duplex (8 dB PAPR)
  • Tested with AMD RFSoC ZCU670 Test Platform controlled by IQSTAR
  • Sampling freq: 983.04 MS/s 
use-case-2-stage-3342

FDD Use case

  • Test signal: 5G NR signal, 2 channels of 100 MHz each, separated by a gap of 400 MHz (600 MHz of instantaneous bandwidth), FDD (8 dB PAPR)
  • Tested with AMD RFSoC ZCU670 Test Platform controlled by IQSTAR
  • Pout = 39.5 dBm
  • Sampling freq: 2457.6 MS/s

TDD Use case

  • Test signal: 5G NR signal, 4 channels of 100 MHz each (400 MHz of instantaneous bandwidth), TDD (8 dB PAPR)
  • Tested with AMD RFSoC ZCU670 Test Platform controlled by IQSTAR
  • Pout = 39.5 dBm
  • Sampling freq: 1638.4 MS/s

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Phone Number +33 05 55 42 62 44

Email Address  contact@wupatec.com

Address Head Office: 20 rue Atlantis, 87068, Limoges, France

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