2-Stage Doherty 3.3 – 4.2 GHz
Discover this unique 2-stage Doherty (driver and final amplifiers in the same design) delivering exceptional performances over its large instantaneous bandwidth.
The device is matched to 50 Ω and RoHS compliant.
Power Amplifier Key Features
- GaN on SiC transistors, 2 stages
- Frequency range: 3.3 GHz – 4.2 GHz
- PAE: 36.5% at 8 dB Output Back Off (OBO)
- Output power at P3dB = 47.5 dBm
- Power gain: 29 dB
- Board size: 60 x 40 mm
Typical Applications
- 3GPP 5G NR FR1 bands n48, n77, n78
- 3GPP 4G LTE bands 42, 48, 49 and 52
- FDD and TDD systems
- Microcell Base Station
- Small cells for wireless communications infrastructure
- Active antennas
- Land Mobile and Military Radio Communications
- General purpose wireless applications
- MIMO applications
PA Efficiency Performance (over the entire bandwidth):
- RF pulsed characterization: 100 μs, 10% Duty Cycle
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Amplifier Performances
- Test signal: 5G NR signal, 1 channel of 100 MHz, Frequency Division Duplex (8 dB PAPR)
- Tested with AMD RFSoC ZCU670 Test Platform controlled by IQSTAR
- Sampling freq: 983.04 MS/s
FDD Use case
- Test signal: 5G NR signal, 2 channels of 100 MHz each, separated by a gap of 400 MHz (600 MHz of instantaneous bandwidth), FDD (8 dB PAPR)
- Tested with AMD RFSoC ZCU670 Test Platform controlled by IQSTAR
- Pout = 39.5 dBm
- Sampling freq: 2457.6 MS/s
TDD Use case
- Test signal: 5G NR signal, 4 channels of 100 MHz each (400 MHz of instantaneous bandwidth), TDD (8 dB PAPR)
- Tested with AMD RFSoC ZCU670 Test Platform controlled by IQSTAR
- Pout = 39.5 dBm
- Sampling freq: 1638.4 MS/s
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Head Office: 20 rue Atlantis, 87068, Limoges, France