2 Stage Doherty 3.7 – 4.2 GHz
Discover this unique 2 stage Doherty design delivering exceptional efficiency and performance
Power Amplifier Key Features
- GaN on SiC transistors, 2 stages
- Frequency range: 3.7GHz – 4.2GHz
- PAE: 42% at 8dB output back off
- Output power at P3dB = 47.5 dBm
- Power gain: 31dB
- Board size: 60 x 40 mm
Typical Applications
- 3GPP 5G NR FR1 bands n77 and n78
- Frequency Division Duplex and Time Division Duplex systems
- Microcell Base Station
- Small cells for wireless communications infrastructure
- Satellite Communications
- Fixed Wireless Access (FWA)
- Private Networks
- Public Safety and Critical Communications
- General purpose wireless applications
- MIMO Applications
RF pulsed characterization:
100μs, 10% Duty Cycle Final Stage Drain Efficiency
Amplifier Performances
- Test signal: 5GNR 100MHz 1C 100MHz Frequency Division Duplex (8dB PAPR)
- AMD RFSoC ZCU670 test platform controlled by IQstar
- Sampling freq: 983.04MS/s
FDD Use case
- Test signal: 5GNR 100MHz 2C 400MHz Frequency Division Duplex (8dB PAPR)
- Pout = 39.5dBm
- Sampling freq: 1638.4MS/s
TDD mode Use case
- Test signal: 5GNR 100MHz 4C 400MHz TDD (8dB PAPR)
- Pout = 39.5dBm
- Sampling freq: 1638.4MS/s
- AMD RFSoC ZCU670 test platform controlled by IQSTAR
Find the reference that is right for you
Contact us
+33 05 55 42 62 44
Head Office: 20 rue Atlantis, 87068, Limoges, France